收藏本站
Si7326DN
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0195 at V GS = 10 V
0.030 at V GS = 4.5 V
I D (A)
10
8
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? 100 % R g Tested
PowerPAK 1212-8
APPLICATIONS
? DC/DC Conversion
3.30 mm
1
S
S
3.30 mm
D
2
3
S
G
4
D
8
D
7
6
D
D
G
5
Bottom View
S
Ordering Information: Si7326DN-T1-E3 (Lead (Pb)-free)
Si7326DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 25
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
10
7.5
40
6.5
5.0
A
Continuous Source Current (Diode
Single Pulse Avalanche Current
Avalanche Energy
Conduction) a
L = 0.1 mH
I S
I AS
E AS
2.9
15
11
1.2
mJ
Soldering Recommendations (Peak Temperature)
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.5
1.9
- 55 to 150
260
1.5
0.8
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
28
65
4.5
35
81
6.0
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74444
S-83051-Rev. C, 29-Dec-08
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI7328DN-T1-E3 MOSFET N-CH 30V PWRPAK 1212-8
SI7342DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7370DP-T1-GE3 MOSFET N-CH 60V 9.6A PPAK 8SOIC
SI7374DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7382DP-T1-GE3 MOSFET N-CH 30V PPAK 8SOIC
SI7386DP-T1-GE3 MOSFET N-CH 30V 12A PPAK 8SOIC
SI7388DP-T1-GE3 MOSFET N-CH 30V PPAK 8SOIC
SI7390DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
相关代理商/技术参数
SI7328DN-T1-E3 功能描述:MOSFET 30V 35A 52W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7328DN-T1-GE3 功能描述:MOSFET 30V 35A 52W 6.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI-7330 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Unipolar Driver ICs
SI7330A 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Unipolar Driver ICs
SI-7330A 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Unipolar Driver ICs
SI7336ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:SI7336ADP
SI7336ADPT1E3 制造商:Vishay Intertechnologies 功能描述:
SI7336ADP-T1-E3 功能描述:MOSFET 30V 30A 5.4W 3.0mohm @10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube